Applications · 2026‑03‑18

Measuring SiC MOSFET breakdown at 3 kV without blowing up the room

A CheckMate station with HVP triax probes and a Keysight B1505A is the configuration we ship most often for SiC MOSFET characterization. Triax to 3 kV with active guarding, a PSDB dark box enclosure, and the analyzer set up for time‑to‑breakdown sweeps.

Two settings make or break the measurement: the probe contact force, and the dwell time at peak voltage. Too little force, you bounce. Too much, you crack the gate. Default to 80 g on the WC tips, 50 ms dwell — adjust from there if the device family is unusual.

Walkthrough video and B1505 setup file in the next issue. If you want a configured demo, schedule one — we'll put your wafer on the bench you'd be buying.

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